Reactor and related methods

ABSTRACT

Systems and related methods are described that can be used for etching and/or depositing materials. In some embodiments, the systems comprise an outer chamber and an inner chamber. The inner chamber can comprise a lower chamber part and an upper chamber part which are moveable with respect to each other between a closed position and an open position. The upper chamber part and the lower chamber part can abut in the closed position. The upper chamber part and the lower chamber part may further define an opening in the open position.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of and priority to U.S. Provisional Patent Application No. 63/112,818 filed Nov. 12, 2020 titled REACTOR AND RELATED METHODS, the disclosure of which is hereby incorporated by reference in its entirety.

FIELD OF INVENTION

The present disclosure generally relates to systems and related methods suitable for executing processes such as etching a layer on a surface of a substrate, and forming a layer on a surface of a substrate.

BACKGROUND OF THE DISCLOSURE

Modern material deposition and etching systems are tasked with ever increasing demands regarding process parameter control. Thus, there is a need for systems and methods which can improve process parameter control.

Any discussion, including discussion of problems and solutions, set forth in this section has been included in this disclosure solely for the purpose of providing a context for the present disclosure. Such discussion should not be taken as an admission that any or all of the information was known at the time the invention was made or otherwise constitutes prior art.

SUMMARY OF THE DISCLOSURE

This summary may introduce a selection of concepts in a simplified form, which may be described in further detail below. This summary is not intended to necessarily identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

Various embodiments of the present disclosure relate to systems comprising an outer chamber and an inner chamber. The inner chamber is positioned within an outer space comprised in the outer chamber. The inner chamber comprises an inner space comprising a substrate support. The inner chamber comprises an upper chamber part and a lower chamber part. The upper chamber part and the lower chamber part are moveable with respect to each other between a closed position and an open position. The upper chamber part and the lower chamber part abut in the closed position, and the upper chamber part and the lower chamber part define an opening in the open position.

In some embodiments, the inner space and the outer space are fluidly disconnected in the closed position, and the inner space and the outer space are in fluid connection in the open position.

In some embodiments, the inner space and the outer space are in fluid connection by means of a bypass duct.

In some embodiments, the opening has a pre-determined opening size, the system further comprises an opening control mechanism, and the opening control mechanism is configured for controlling the opening size.

In some embodiments, the opening control mechanism comprises a linear actuator.

In some embodiments, the opening control mechanism comprises a rotary actuator.

In some embodiments, the system further comprises an active species source operationally connected with the inner chamber.

In some embodiments, the active species source is in fluid connection with the inner chamber by means of an active species connector comprised in the upper chamber part.

In some embodiments, the active species source comprises a remote plasma source.

In some embodiments, the active species source comprises a radical source.

In some embodiments, the radical source is separated from the inner space by one or more diffusers.

In some embodiments, the one or more diffusers are selected from perforated plates and wire mesh plates.

In some embodiments, the radical source is separated from the inner space by two or more separators selected from perforated plates and wire mesh plates.

In some embodiments, the radical source comprises a hot wire source.

In some embodiments, the active species source comprises a ultraviolet light (UV) source.

In some embodiments, the system further comprises a showerhead injector.

In some embodiments, the system further comprises an RF generator and a ground, wherein the system is configured for generating a plasma between the showerhead injector and the substrate support.

In some embodiments, the showerhead injector is a dual channel showerhead injector comprising a first set of channels and a second set of channels.

In some embodiments, the upper chamber part has a conical shape.

In some embodiments, the lower chamber part has a conical shape.

In some embodiments, the lower chamber part comprises an exhaust connector in fluid connection with an exhaust.

In some embodiments, the outer chamber is in fluid connection with an exhaust.

In some embodiments, the system is configured to maintain the outer chamber at an outer chamber pressure, and is configured to maintain the inner chamber at an inner chamber pressure.

In some embodiments, the inner chamber pressure and the outer chamber pressure are different.

In some embodiments, the inner chamber pressure is lower than the outer chamber pressure.

In some embodiments, the inner chamber pressure is higher than the outer chamber pressure.

In some embodiments, the system further comprises an inner chamber wall heater for heating at least one of the lower chamber part and the upper chamber part.

In some embodiments, the system further comprises an outer chamber wall heater for heating a wall of the outer chamber.

In some embodiments, the substrate support comprises a heater.

In some embodiments, the substrate support is provided with a stabilizing mechanism for keeping the substrate support stationary when the upper chamber part and the lower chamber part move with respect to each other.

In some embodiments, the system further comprises an ellipsometer.

In some embodiments, the system further comprises a hull. The hull surrounds the outer chamber.

In some embodiments, the system further comprises a first precursor injector and a second precursor injector.

In some embodiments, the outer chamber is insulated.

In some embodiments, the system further comprises a loadlock.

In some embodiments, the system further comprises a wafer handling system.

In some embodiments, the substrate support is connected to the upper chamber part.

Further described herein is a method for controlling one or more reaction conditions in an inner chamber. The inner chamber is positioned within an outer space comprised in an outer chamber. The inner chamber comprises an inner space comprising a substrate support supporting a substrate. The inner chamber further comprises an upper chamber part and a lower chamber part. The upper chamber part and the lower chamber part define an opening. The opening has an opening size, and the opening fluidly connects the inner space and the outer space. The method comprises maintaining the outer chamber at an outer chamber pressure, and maintaining the inner chamber at an inner chamber pressure. The method further comprises moving the upper chamber part with respect to the lower chamber part, or moving the lower chamber part with respect to the upper chamber part, by means of an opening control mechanism. Accordingly, the opening size is controlled. Controlling the opening size allows controlling at least one process parameter selected from inner chamber temperature, inner chamber pressure, inner chamber pumping speed, inner chamber gas flow rate, inner chamber process uniformity, and inner chamber residence time.

In some embodiments, the outer chamber pressure is lower than the inner chamber pressure.

In some embodiments, the method further comprises heating at least one of the lower chamber part and the upper chamber part.

In some embodiments, the method further comprises heating a wall of the outer chamber.

In some embodiments, the method comprises heating the substrate by means of a heater comprised in the substrate support.

Further described is a method for depositing a material on a substrate comprising providing a system as described herein. The method comprises positioning a substrate on the system's substrate support. The method further comprises cyclically executing one or more cycles. A cycle comprises the following steps, in the following order: a step of contacting the substrate with a first precursor; and, a step of contacting the substrate with a second precursor. Thus, a material is deposited on the substrate.

In some embodiments, the step of contacting the substrate with the first precursor and the step of contacting the substrate with the second precursor are separated by an intra-cycle purge.

In some embodiments, subsequent cycles are separated by an inter-cycle purge.

In some embodiments, the upper chamber part and the lower chamber part are in the closed position during at least one of contacting the substrate with the first precursor and contacting the substrate with the second precursor. Additionally, the upper chamber part and the lower chamber part are in the open position during at least one of contacting the substrate with the first precursor and contacting the substrate with the second precursor.

In some embodiments, the upper chamber part and the lower chamber part are in the closed position during at least one of the intra-cycle purge and the inter-cycle purge.

In some embodiments, the upper chamber part and the lower chamber part are in the open position during at least one of the intra-cycle purge and the inter-cycle purge.

Further described herein is a method for depositing a material on a substrate. The method comprises providing a system as described herein. The method further comprises positioning a substrate on the substrate support. The method further comprises contacting the substrate with one or more precursors while controlling one or more reaction conditions in the inner chamber by means of a method as described herein. Thus, a material is deposited on the substrate.

Further described herein is a method for etching a material. The method comprises providing a system as described herein and positioning a substrate on the system's substrate support. The method further comprises cyclically executing one or more cycles. A cycle comprises the following steps, in the following order: a step of contacting the substrate with a first reactant; and, a step of contacting the substrate with a second reactant. Thus, a material comprised in the substrate is etched.

In some embodiments, the step of contacting the substrate with the first reactant and the step of contacting the substrate with the second reactant are separated by an intra-cycle purge.

In some embodiments, subsequent cycles are separated by an inter-cycle purge.

In some embodiments, the upper chamber part and the lower chamber part are in the closed position during at least one of contacting the substrate with the first reactant and contacting the substrate with the second reactant; and, the upper chamber part and the lower chamber part are in the open position during at least one of contacting the substrate with the first reactant and contacting the substrate with the second reactant.

In some embodiments, the upper chamber part and the lower chamber part are in the closed position during at least one of the intra-cycle purge and the inter-cycle purge.

In some embodiments, the upper chamber part and the lower chamber part are in the open position during at least one of the intra-cycle purge and the inter-cycle purge.

Further described herein is a method for etching a material from a substrate. The method comprises providing a system as described herein, and positioning a substrate on the system's substrate support. The method further comprises contacting the substrate with one or more reactants while controlling one or more reaction conditions in the inner chamber by means of a method as described herein. Thus, a material is etched from the substrate.

These and other embodiments will become readily apparent to those skilled in the art from the following detailed description of certain embodiments having reference to the attached figures. The invention is not being limited to any particular embodiments disclosed.

BRIEF DESCRIPTION OF THE DRAWING FIGURES

A more complete understanding of the embodiments of the present disclosure may be derived by referring to the detailed description and claims when considered in connection with the following illustrative figures.

FIG. 1 illustrates an embodiment of a system (100) as described herein.

FIG. 2 illustrates an embodiment of an inner chamber (300) in a closed position.

FIG. 3 illustrates an embodiment of an inner chamber (300) in an open position.

FIGS. 4-7 illustrate exemplary embodiments of methods as described herein.

FIG. 8 illustrates an embodiment of a system (100) as described herein.

Throughout FIGS. 1, 2, 3, and 8, the following numbering is adhered to: 100—system; 200—outer chamber; 300—inner chamber; 310—upper chamber part; 320—lower chamber part; 330—inner space; 340—substrate support; 400—active species source; 420—active species line; 860—bypass duct; 870—exhaust.

It will be appreciated that elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to help improve understanding of illustrated embodiments of the present disclosure.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

The description of exemplary embodiments of methods, structures, devices and systems provided below is merely exemplary and is intended for purposes of illustration only; the following description is not intended to limit the scope of the disclosure or the claims. Moreover, recitation of multiple embodiments having stated features is not intended to exclude other embodiments having additional features or other embodiments incorporating different combinations of the stated features. For example, various embodiments are set forth as exemplary embodiments and may be recited in the dependent claims. Unless otherwise noted, the exemplary embodiments or components thereof may be combined or may be applied separate from each other.

Described herein are, in some embodiments, systems and related methods that can be used, for example, for etching and/or depositing materials. In some embodiments, the systems comprise an outer chamber and an inner chamber. The inner chamber comprises a lower chamber part and an upper chamber part which are moveable with respect to each other between a closed position and an open position. The upper chamber part and the lower chamber part abut in the closed position. In some embodiments, an inner space comprised in the inner chamber and an outer space comprised in the outer chamber are fluidly disconnected in the closed position. The upper chamber part and the lower chamber part further define an opening in the open position. It shall be understood that the inner space and the outer space are in fluid connection when the upper chamber part and the lower chamber part are in the open position. In other words, in the open position, gas can flow between the inner chamber and the outer chamber through an opening between the upper chamber part and the lower chamber part. In some embodiments, no gas can flow between the inner chamber and the outer chamber when the upper chamber part and the lower chamber part are in the closed position. In one exemplary mode of operation, the inner chamber is operated at a pressure which is higher than the pressure used in the outer chamber, such that, in the open position, gas flows from the inner chamber to the outer chamber. In other embodiments, the inner chamber and the outer chamber are in fluid connection by means of a bypass duct such that gas can flow between the inner chamber and the outer chamber, even when the upper chamber part and the lower chamber part are in the closed position. Thus, the inner chamber and the outer chamber can be maintained at substantially equal pressures, regardless of the position of the upper chamber part and the lower chamber part.

In some embodiments, “gas” can include material that is a gas at normal temperature and pressure (NTP), a vaporized solid and/or a vaporized liquid, and can be constituted by a single gas or a mixture of gases, depending on the context. A gas other than the process gas, i.e., a gas introduced without passing through a gas distribution assembly, other gas distribution device, or the like, can be used for, e.g., sealing the reaction space, and can include a seal gas, such as a noble gas. In some cases, the term “precursor” can refer to a compound that participates in the chemical reaction that produces another compound, and particularly to a compound that constitutes a film matrix or a main skeleton of a film; the term “reactant” can be used interchangeably with the term precursor. Alternatively, a “reactant” may refer to a compound that reacts with a surface of a substrate to form a volatile reaction product. Thus, “reactants” may be used in both deposition processes or etching processes, or both.

In some embodiments, “substrate” can refer to any underlying material or materials that can be used to form, or upon which, a device, a circuit, or a film can be formed. A substrate can include a bulk material, such as silicon (e.g., single-crystal silicon), other Group IV materials, such as germanium, or other semiconductor materials, such as Group II-VI or Group III-V semiconductor materials, and can include one or more layers overlying or underlying the bulk material. Further, the substrate can include various features, such as recesses, protrusions, and the like formed within or on at least a portion of a layer of the substrate. By way of examples, a substrate can include bulk semiconductor material and an insulating or dielectric material layer overlying at least a portion of the bulk semiconductor material. Exemplary substrates include wafers such as silicon wafers, e.g., 200 mm wafers, 300 mm wafers, or 450 mm wafers.

In some embodiments, “film” and/or “layer” can refer to any continuous or non-continuous structure and material, such as material deposited by the methods disclosed herein. For example, film and/or layer can include two-dimensional materials, three-dimensional materials, nanoparticles or even partial or full molecular layers or partial or full atomic layers or clusters of atoms and/or molecules, or layers consisting of isolated atoms and/or molecules. A film or layer may comprise material or a layer with pinholes, which may or may not be continuous.

In some embodiments, “cyclic deposition process” or “cyclical deposition process” can refer to the sequential introduction of precursors (and/or reactants) into a reaction chamber to deposit a layer over a substrate and includes processing techniques such as atomic layer deposition (ALD), cyclical chemical vapor deposition (cyclical CVD), and hybrid cyclical deposition processes that include an ALD component and a cyclical CVD component.

In some embodiments, “atomic layer deposition” (ALD) can refer to a vapor deposition process in which deposition cycles, typically a plurality of consecutive deposition cycles, are conducted in a process chamber. The term atomic layer deposition, as used herein, is also meant to include processes designated by related terms, such as chemical vapor atomic layer deposition, atomic layer epitaxy, molecular beam epitaxy (MBE), gas source MBE, organometallic MBE, and chemical beam epitaxy, when performed with alternating pulses of precursor(s)/reactive gas(es), and purge (e.g., inert carrier) gas(es).

In some embodiments, “atomic layer etch” can refer to a vapor etching process in which etching cycles, typically a plurality of consecutive etching cycles, are conducted in a process chamber. The term “atomic layer deposition” can include processes designated by related terms.

Further, in this disclosure, any two numbers of a variable can constitute a workable range of the variable, and any ranges indicated may include or exclude the endpoints. Additionally, any values of variables indicated (regardless of whether they are indicated with “about” or not) may refer to precise values or approximate values and include equivalents, and may refer to average, median, representative, majority, or the like. Further, in this disclosure, the term “comprising” indicates that the embodiment it refers to includes those features, but it does not exclude the presence of other features, as long as they do not render the corresponding embodiment unworkable. On the other hand, “consisting of” indicates that no further features are present in the embodiment concerned apart from the ones following said wording, except optional further features which do not materially affect the essential characteristics of the corresponding embodiment. It shall be understood that the term “comprising” includes the meaning of the term “consisting of”.

Described herein is a system comprising an outer chamber and an inner chamber. The inner chamber is positioned within an outer space comprised in the outer chamber. In other words, the inner chamber is in the outer chamber. The inner chamber further comprises a substrate support for holding a substrate. Suitable substrate supports include susceptors, pedestals, plates, meshes, and the like. The inner chamber comprises an upper chamber part and a lower chamber part. The upper chamber part and the lower chamber part are moveable with respect to each other between a closed position and an open position. The upper chamber part and the lower chamber part abut in the closed position. In some embodiments, the inner space and the outer space are fluidly disconnected when the upper chamber part and the lower chamber part are in the closed position. The upper chamber part and the lower chamber part define an opening in the open position. When the upper chamber part and the lower chamber part are in the open position, the inner space and the outer space are in fluid connection through the opening. In other words, the inner space and the outer space are connected through the opening. In other words, the upper chamber part and/or the lower chamber part can be actuated, e.g., by means of a linear or rotary actuator, to move thereby forming or closing an opening between the upper chamber part and the lower chamber part. When the opening is opened, the interior volume of the inner chamber and the interior volume of the outer chamber are in fluid connection, thereby allowing for exchange of gaseous species between the interior volume of the inner chamber and the interior volume of the outer chamber. It further allows controlling various reaction conditions in the inner chamber. In particular, it shall be understood that process parameters such as gas flow distribution over a substrate comprised in the inner chamber, as well as pumping speed, and therefore total pressure in the inner chamber, can be effectively controlled at relatively small openings. At relatively large openings, process parameters such as substrate temperature can be controlled. Also, controlling the size of the opening can be a particularly effective way for controlling total pressure in the inner reaction chamber, especially at very low pressures. In addition, maintaining the upper chamber part and the lower chamber part in the open position during at least part of a deposition process or an etching process can advantageously result in low background contamination levels.

In some embodiments, the inner space and the outer space are in fluid connection by means of a bypass duct. Thus, a fluid connection between the inner space and the outer space can be maintained regardless of the relative position of the upper chamber part and the lower chamber part. Thus, the pressure in the inner space and the outer space can be maintained at a level which is approximately equal to the pressure in the outer space, whereas other reaction conditions in the inner space can be varied by means of the size of the opening between the upper chamber part and the lower chamber part.

In some embodiments, the system comprises an opening control mechanism. The opening control mechanism can be configured for controlling the size of the opening between the lower chamber part and the upper chamber part. For example, the opening control mechanism may control the distance coordinate of a linear actuator operationally connected to at least one of the lower chamber part and the upper chamber part. Additionally or alternatively, the opening control mechanism may control the rotatory coordinate of a rotary actuator, i.e., a rotation angle, operationally connected to at least one of the lower chamber part and the upper chamber art. Thus, the opening control mechanism can control the size of the opening to a pre-determined value.

In some embodiments, the opening control mechanism is configured for controlling the size of the opening between the lower chamber part and the upper chamber part between two or more opening positions. In some embodiments, the opening control mechanism is configured for controlling the size of the opening between the lower chamber part and the upper chamber part between three or more opening positions. In some embodiments, the opening control mechanism is configured for controlling the size of the opening between the lower chamber part and the upper chamber part between four or more opening positions. In some embodiments, the opening control mechanism is configured for controlling the size of the opening between the lower chamber part and the upper chamber part between five or more opening positions. In some embodiments, the opening control mechanism is configured for controlling the size of the opening between the lower chamber part and the upper chamber part between ten or more opening positions. In some embodiments, the opening control mechanism is configured for controlling the size of the opening between the lower chamber part and the upper chamber part between 20 or more opening positions. In some embodiments, the opening control mechanism is configured for controlling the size of the opening between the lower chamber part and the upper chamber part between 50 or more opening positions. In some embodiments, the opening control mechanism is configured for controlling the size of the opening between the lower chamber part and the upper chamber part between 100 or more opening positions. In some embodiments, the opening control mechanism is configured for controlling the size of the opening between the lower chamber part and the upper chamber part between a plurality of opening positions, for example a continuum of opening positions between a closed position and a maximum opening position. In some embodiments, the size of the opening can be controlled in a plurality of intervals, e.g., in a plurality of intervals of from at least 1 μm to at most 1 mm, or of at least 2 μm to at most 500 μm, or from at least 5 μm to at most 200 μm, or from at least 10 μm to at most 100 μm, or from at least 30 μm to at most 70 μm, for example in a plurality of intervals of 50 μm. In some embodiments, the maximum opening position is from at least 1 mm to at most 50 mm, or from at least 1 mm to at most 2 mm, or from at least 2 mm to at most 5 mm, or from at least 5 mm to at most 10 mm, or from at least 10 mm to at most 20 mm, or from at least 20 mm to at most 50 mm, e.g., 12.5 mm. In some embodiments, the maximum opening size is 30 mm. In some embodiments, the opening control mechanism includes electronic circuitry including a processor, and software to selectively operate an actuator controlling the size of the opening. The opening control mechanism can include control software to control the size of the opening. The opening control mechanism can include modules such as a software or hardware component, e.g., a FPGA or ASIC, which performs certain tasks. It shall be understood that where the controller includes a software component to perform a certain task, the controller is programmed to perform that particular task. A module can advantageously be configured to reside on the addressable storage medium, i.e., memory, of the control system and be configured to control, for example, a specific movement of at least one of the upper chamber part and the lower chamber part.

In some embodiments, the system comprises a precursor injector and/or a reactant injector. When the system comprises only one precursor or reactant injector, this injector can be used, for example, for providing a precursor or a reactant to the inner chamber. The precursor can be then used for forming a layer on a substrate on the substrate support, e.g., by means of a technique such as chemical vapor deposition (CVD) or plasma-enhanced chemical vapor deposition (PECVD). In some embodiments, the system comprises additional injectors for injecting an inert gas, such as inert gas injectors, e.g., dilution gas injectors, or seal gas injectors. Suitable inert gasses include the noble gasses. In exemplary embodiments, inert gas injectors can be provided to provide an inert gas to at least one of the inner chamber, the outer chamber, and a reactive species source.

In some embodiments, the system comprises a first precursor injector and a second precursor injector. In some embodiments, the first and/or the second precursor injector are comprised in the inner chamber, and provide precursor to the inner chamber.

In some embodiments, the system further comprises a showerhead injector. A showerhead injector can suitably be used to evenly provide precursors to a substrate comprised in the inner chamber.

In some embodiments, the showerhead injector is a dual channel showerhead injector comprising a first set of channels and a second set of channels. The first set of channels can provide, for example, a first precursor to the inner chamber whereas the second set of channels provides a second precursor to the reaction chamber. An exemplary dual channel showerhead injector is described in U.S. Pat. No. 7,601,223.

In some embodiments, the upper chamber part has a conical shape. In some embodiments, the lower chamber part has a conical shape. Such a conical shape can improve process uniformity in the inner chamber.

In some embodiments, the lower chamber part comprises an exhaust connector in fluid connection with an exhaust. In order to facilitate removal of gasses such as reaction products, unreacted precursor, carrier gasses, and the like from the inner chamber, the exhaust connector can suitably be in fluid connection with a gas evacuating means such as a pump, e.g., a turbo pump, and/or a cold trap. The gas evacuating means of may or may not be comprised in the presently described systems.

In some embodiments, the outer chamber is in fluid connection with an exhaust. The outer chamber may comprise, for example, an exhaust connector in fluid connection with an exhaust. In order to facilitate removal of gasses such as reaction products, unreacted precursor, carrier gasses, and the like from the inner chamber, the exhaust connector can suitably be in fluid connection with a gas evacuating means such as a pump, e.g., a turbo pump, and/or a cold trap. The gas evacuating means of may or may not be comprised in the presently described systems.

In some embodiments, the outer chamber is in fluid connection with an exhaust and the inner chamber is in fluid connection with the outer chamber through a bypass duct. Thus, gaseous species in the inner chamber can be removed from the inner chamber by means of the exhaust of the outer chamber, irrespective of the relative position of the lower chamber part and the upper chamber part. In some embodiments, the outer chamber is in fluid connection with an exhaust, the inner chamber is in fluid connection with the outer chamber through a bypass duct, and the inner chamber is not in fluid connection with a separate exhaust.

In some embodiments, the substrate support comprises a heater.

In some embodiments, the substrate support is provided with a stabilizing mechanism for keeping the substrate support stationary when the upper chamber part and the lower chamber part move with respect to each other.

The systems described herein may, in some embodiments, further comprise a loadlock and/or a wafer handling system. Accordingly, when a wafer, e.g., a semiconductor wafer such as a silicon wafer, is used as a substrate, the substrate can be efficiently and optionally automatically moved from a loading station, i.e., load lock, to the inner chamber.

In some embodiments, the substrate support is connected to the upper chamber part. In such embodiments, the relative positions of the substrate support and the upper chamber part can be efficiently fixed.

In some embodiments, the system is configured to maintain the outer chamber at an outer chamber pressure, and is configured to maintain the inner chamber at an inner chamber pressure. In some embodiments, the inner chamber pressure and the outer chamber pressure are different. In some embodiments, the inner chamber pressure is lower than the outer chamber pressure. In some embodiments, the inner chamber pressure is higher than the outer chamber pressure. In some embodiments, an inner chamber pressure which is higher than the outer chamber pressure can advantageously be used during a cyclic deposition process, e.g., an ALD process, for periodically removing unreacted precursor and/or reaction byproducts from the inner chamber, e.g., during one or more purge steps.

In some embodiments, the system further comprises an inner chamber wall heater for heating at least one of the lower chamber part and the upper chamber part. Accordingly, in some embodiments, the system comprises a heater for heating the walls of the lower chamber part. Additionally or alternatively, the system can, in some embodiments, comprise a heater for heating the walls of the upper chamber part. In some embodiments, the system comprises a heater for heating the walls of the upper chamber part and the system comprises a heater for heating the walls of the lower chamber part. Suitable heaters include resistive heaters such as a spirally wound wire, e.g., a spirally wound metal wire, e.g., a spirally wound tungsten wire. Indeed, a wire can, in some embodiments, be suitably wound around the lower chamber part and/or the upper chamber part, and be connected to an electrical power source to heat the lower chamber part and/or the upper chamber part by means of resistive heating. For example, the lower chamber part and/or the upper chamber part may be heated, for example, to a temperature of at least 50° C. to at most 1000° C., or to a temperature of at least 100° C. to at most 800° C., or to a temperature of at least 400° C. to at most 700° C., e.g., to a temperature of 600° C., e.g., to a temperature of 500° C. Thus, the temperature of the walls of the inner chamber can be effectively controlled, and consequentially, the sticking coefficient of gasses such as precursors or reactants used in the inner chamber can be controlled as well.

In some embodiments, the system further comprises an outer chamber wall heater for heating the walls of the outer chamber. Accordingly, in some embodiments, the system comprises a heater for heating the walls of the outer chamber. Suitable heaters include resistive heaters such as a spirally wound wire, e.g., a spirally wound tungsten wire. Indeed, a wire can, in some embodiments, be suitably wound around the walls of the outer chamber, and be connected to an electrical power source to heat the outer chamber by means of resistive heating. For example, the outer chamber walls may be heated, for example, to a temperature of at least 50° C. to at most 1000° C., or to a temperature of at least 100° C. to at most 600° C., or to a temperature of at least 150° C. to at most 400° C., e.g., to a temperature of at most 200° C. In some embodiments, the outer chamber walls may be heated to a temperature of at least 50° C. to at most 250° C. Thus, the walls of the inner chamber can be effectively controlled, and the sticking coefficient of gasses such as precursors used in the inner chamber can be controlled.

In some embodiments, it can be useful to heat at least one of the inner and outer chamber walls and reduce the sticking coefficient of gasses in order to allow the system to be used for high throughput atomic layer deposition (ALD) or cyclical ALD-like processes in which individual unit steps need not necessarily be self-limiting.

In some embodiments, the system further comprising a hull which surrounds the outer chamber. The hull can comprise, for example, a temperature-resistant material such as steel.

In some embodiments, the outer chamber is insulated, e.g., by means of double wall insulation, and/or by means of aluminum oxide cladding. Outer chamber insulation can advantageously improve temperature control in the inner chamber and/or in the outer chamber. Additionally or alternatively, outer chamber insulation can reduce heat losses to the environment. In some embodiments, an outer surface of the outer chamber can be cooled by means of a cooling jacket, e.g., by means of a cooling jacket comprising water.

In some embodiments, the system comprises one or more heated gas lines. In some embodiments, the heated gas lines are heated to a temperature which is below the temperature of the inner chamber. In some embodiments, the heated gas lines are heated to a temperature which is equal, or approximately equal, to the temperature of the outer chamber. In some embodiments, the heated gas lines are heated to a temperature of at least 50° C. to at most 1000° C., or to a temperature of at least 100° C. to at most 600° C., or to a temperature of at least 150° C. to at most 400° C., e.g., to a temperature of 200° C.

In some embodiments, the system further comprises an RF generator and a ground, wherein the system is configured for generating a plasma between the showerhead injector and the substrate support.

In some embodiments, the system further comprises an active species source operationally connected with the inner chamber. Suitable active species sources include radical sources, e.g., a remote plasma source or a hot wire source, and ultraviolet (UV) sources, e.g., a vacuum UV source. The active species source can suitably comprise a gas connector that can be connected with an active species precursor gas line for providing an active species precursor gas. Exemplary active species precursors include H₂. The active species source can then interact with the active species precursor gas to yield an active species that can then be directed via the inner chamber, e.g., by means of an active species line. The active species line may have, for example, a length greater than 20 cm or greater than 50 cm, greater than 1 m, or greater than 2 m. Alternatively, the active species source can be positioned in the inner chamber. Alternatively, the active species source can be positioned adjacent to the reaction chamber. It shall be understood that no active species line is necessarily required when, for example, the active species source is positioned in, or adjacent to, the inner chamber.

In some embodiments, when a dual channel showerhead injector is used, one set of channels can be used to provide an active species, e.g., radicals, to the inner chamber and another set of channels can be for injecting a precursor that can react with the active species, e.g., in a pulsed fashion through surface reactions on a substrate provided on the substrate support provided in the inner chamber.

In some embodiments, the active species source is in fluid connection with the inner chamber, for example by means of an active species connector. The active species connector can, in some embodiments, be comprised in the upper chamber part. Alternatively, the active species connector can be comprised in the lower chamber part.

In some embodiments, the active species source comprises a remote plasma source.

In some embodiments, the active species source comprises a radical source. It shall be understood that the present systems are highly suitable for working with radical sources. In particular, forming an opening between the lower chamber part and the upper chamber part allows efficiently removing reaction byproducts from the inner chamber, thereby lowering inner chamber pressure, and hence reducing parasitic recombination of radicals in the gas phase. Suitable radical sources include hot wire sources and plasmas such as capacitively coupled plasma or an inductively coupled plasma.

In some embodiments, the radical source is separated from the inner space by one or more diffusers. In some embodiments, two diffusers separate the radical source and the inner space. Diffusers can suitably disrupt the line-of-sight between the radical source and the substrate support, thereby shielding the substrate support and any substrate positioned thereon, from certain types of energetic radiation (e.g., IR radiation and/or UV radiation) and/or certain types of energetic particles (e.g., ions) emanating from the radical source. Radicals, on the other hand, pass the one or more diffusers. Suitable diffusers include perforated plates and wire mesh plates. Thus in some embodiments, the radical source is separated from the inner space by one or more meshes. In addition, the one or more diffusers can shield the inner space from thermal energy radiated from the radical source; for example the temperature of a hot wire source can be very high. In addition, one or more diffusers can minimize back stream diffusion from the inner chamber towards the radical source. In addition, the one or more diffusers can assist in providing radicals to the wafer easily. Also, when a precursor is provided to the system upstream of at least one diffuser, the at least one diffuser can assist in providing the precursor to the wafer in a uniform way.

In some embodiments, the system further comprises an ellipsometer. The ellipsometer can, for example, be suitably arranged for measuring the thickness of a layer which is deposited on a substrate positioned on the substrate support. Additionally or alternatively, the ellipsometer can, for example, be arranged for measuring the temperature of a substrate positioned on the substrate support.

Further described herein is a method for controlling one or more reaction conditions in an inner chamber. The inner reaction chamber can be comprised in a system as described herein. The inner chamber is positioned within an outer space comprised in an outer chamber, and comprises an inner space. The inner space in turn comprises a substrate support supporting a substrate. The inner chamber further comprises an upper chamber part and a lower chamber part. The upper chamber part and the lower chamber part define an opening. Through the opening, the inner space and the outer space are in fluid connection, i.e., the opening allows gases to flow between the inner space and the outer space. The method further comprises maintaining the outer chamber at an outer chamber pressure. In some embodiments, the outer chamber pressure is lower than an inner chamber pressure which is maintained in the inner chamber. The method further comprises moving the upper chamber part relative to, i.e., with respect to, the lower chamber part. Additionally or alternatively, the lower chamber part can be moved with respect to the upper part. Moving the lower chamber part with respect to the upper chamber part or vice versa can be done by means of an opening control mechanism. Thus, the size of the opening between the lower chamber and the upper chamber can be controlled. By controlling the size of this opening, various process parameters of the inner chamber can be controlled. Exemplary process parameters that can be controlled include inner chamber temperature, inner chamber pressure, inner chamber pumping speed, inner chamber gas flow rate, inner chamber process uniformity, and inner chamber residence time. When the outer chamber pressure is lower than the inner chamber pressure, controlling the size of the opening allows for improved control over local pumping speed and local pressure in the inner chamber, for example when used together with one or more gas removal devices such as a pump or cold trap, compared to removing gas from the inner chamber simply by means of one or more gas removal devices.

In some embodiments, the inner chamber is in fluid connection with the outer chamber through a bypass duct and through the opening between the upper chamber part and the lower chamber part. In such embodiments, the outer chamber is in fluid connection with an exhaust, and the inner chamber may or may not be in fluid connection with a separate exhaust. Thus, gaseous species in the inner chamber can be removed from the inner chamber by means of the exhaust of the outer chamber, irrespective of the relative position of the lower chamber part and the upper chamber part.

In some embodiments, the inner reaction chamber is maintained at a pressure of at least 1·10⁻¹¹ mbar to at most 1·10⁻² mbar, or at a pressure of at least 1·10⁻¹⁰ mbar to at most 1·10⁻³ mbar, or at a pressure of at least 1·10⁻⁹ mbar to at most 1·10⁻⁴ mbar, or at a pressure of at least 1·10⁻⁸ mbar to at most 1·10⁻⁵ mbar, or at a pressure of at least 1·10⁻² mbar to at most 1·10⁻⁶ mbar. In some embodiments, the pressure in the inner reaction chamber is controlled by controlling the size of the opening between the lower chamber part and the upper chamber part. In some embodiments, the pressure in the inner chamber is controlled by controlling an amount of inert gas, precursor, and/or reactant enters the inner chamber, for example by means of one or more valves, e.g., throttle valves.

In some embodiments, the system comprises a substrate positioned on the substrate support in the inner chamber, and the inner chamber is configured for maintaining the substrate at a temperature of at least 25° C. to at most 600° C., or at a temperature of at least 50° C. to at most 500° C., or at a temperature of at least 100° C. to at most 400° C., or at a temperature of at least 200° C. to at most 300° C. Heating the substrate can be done, for example, by means of a substrate heater comprised in the substrate support. Additionally or alternatively, the substrate can be heated by means of a heater comprised in the lower chamber part and/or the upper chamber part, e.g., to a temperature of at least 25° C. to at most 600° C., or at a temperature of at least 50° C. to at most 500° C., or at a temperature of at least 100° C. to at most 400° C., or at a temperature of at least 200° C. to at most 300° C. Accordingly, the temperature of the walls of the inner chamber can be efficiently controlled, which in turn allows controlling the sticking coefficient of various gasses on the walls of the inner chamber.

In some embodiments, the method comprises heating the walls of the outer chamber which can be useful, for example, for controlling the sticking coefficient of gasses on the walls of the outer chamber. For example in reactants such as NH₃ or H₂O can have a tendency to stick to cold walls in a reactor, thereby requiring long pulse times when ALD processes are run in reactors with unheated walls. Heating the walls of the inner and/or outer chamber, on the other hand, can allow reducing the sticking coefficient of such gasses on the reactor walls, thus allowing for shorter pulse times and higher throughput. In some embodiments, the walls of the outer chamber can be heated to a temperature of at least 25° C. to at most 600° C., or to a temperature of at least 50° C. to at most 400° C., or to a temperature of at least 100° C. to at most 300° C.

Turning now to the figures, FIG. 1 illustrates an embodiment of a system (100) as described herein. The system (100) comprises an outer chamber (200) enclosing an inner chamber (300). Optionally, the system comprises an active species source (400) which can be operationally connected to the inner chamber (300) by means of an active species line (420). The inner chamber (300) can be in a closed position or in an open position. The system (100) can be used to perform a method as described herein and/or form a structure or device portion as described herein.

The inner chamber (300) can, for example, be used for chemical deposition or etching processes such as atomic layer deposition (ALD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (CVD), plasma-enhanced atomic layer deposition (PEALD), radical-enhanced atomic layer deposition (REALD), atomic layer etching (ALEt), etc. The system can include one or more precursor or reactant sources including a vessel and precursors or reactants—alone or mixed with one or more carrier (e.g., inert) gases. The system (100) can include any suitable number of gas sources. The gas sources can be coupled to the inner chamber, the outer chamber, and/or the active species source via lines, which can each include flow controllers, valves, heaters, and the like. Suitable valves include throttle valves. The system can include an exhaust comprising one or more gas removal devices, e.g., including one or more vacuum pumps.

The system (100) can include a controller including electronic circuitry and software to selectively operate the opening of the inner chamber, valves, manifolds, heaters, pumps and other components included in the system (100). Such circuitry and components operate to introduce precursors, reactants, and/or purge gases from the respective sources. In some embodiments, the controller can control timing of gas pulse sequences, temperature of the substrate and/or reaction chamber, pressure within the reaction chamber, and various other operations to provide proper operation of the system (100).

The controller can include control software to electrically or pneumatically control valves to control flow of oxidizing agents, cleaning agents, plasma gasses, and/or purge gases into and out of the reaction chamber. The controller can include modules such as a software or hardware component, e.g., a FPGA or ASIC, which performs certain tasks. A module can advantageously be configured to reside on the addressable storage medium of the control system and be configured to execute one or more processes.

Various configurations of the system are possible, including various numbers and kinds of precursor sources, plasma gas sources, and purge gas sources.

FIG. 2 illustrates an embodiment of an inner chamber (300) in a closed position. In the closed position, the inner chamber's upper chamber part (310) and lower chamber part (320) abut, thereby fluidly separating an inner space (330) in the inner chamber (300) from an outer space in the outer chamber.

FIG. 3 illustrates an embodiment of an inner chamber (300) in an open position. In the open position, the inner chamber's upper chamber part (310) and lower chamber part (320) are positioned apart, thereby leaving an opening having a predetermined size between the upper chamber part (310) and the lower chamber part (320). The inner space (330) in the inner chamber is in fluid connection with the outer space in the outer chamber.

FIG. 4 illustrates an embodiment of a method for depositing a material on a substrate. The method employs a system as described herein and comprises positioning a substrate on a substrate support (411). Then, the method comprises cyclically executing one or more cycles (415), e.g., a plurality of cycles, e.g., 2, 5, 10, 20, 50, 100, 200, 500, 1000, 2000, 5000 or more cycles. A cycle comprises the following steps, in the following order: a step of contacting the substrate with a first precursor (412), and a step of contacting the substrate with a second precursor (413). Thus, a material, e.g., a layer, is deposited on the substrate, and the method ends (414).

In some embodiments, at least one of the step of contacting the substrate with a first precursor (412) and the step of contacting the substrate with a second precursor (413) comprises generating a plasma in the inner chamber. In some embodiments, at least one of the step of contacting the substrate with a first precursor (412) and the step of contacting the substrate with a second precursor (413) comprises providing a reactive species to the inner chamber. In some embodiments, at least one of the step of contacting the substrate with a first precursor (412) and the step of contacting the substrate with a second precursor (413) comprises providing ultraviolet light to the inner chamber.

Optionally, the step of contacting the substrate with the first precursor and the step of contacting the substrate with the second precursor can be separated by an intra-cycle purge (416). Additionally or alternatively, subsequent cycles can, in some embodiments, be separated by an inter-cycle purge (417).

In some embodiments, the upper chamber part and the lower chamber part are in the closed position during at least one of contacting the substrate with the first precursor and contacting the substrate with the second precursor. Additionally or alternatively, the upper chamber part and the lower chamber part can, in some embodiments, be in the open position during at least one of contacting the substrate with the first precursor and contacting the substrate with the second precursor. Thus, the reaction conditions can be efficiently controlled during any one of the steps of contacting the substrate with the first and second precursors.

In some embodiments, the upper chamber part and the lower chamber part are in the closed position during at least one of the intra-cycle purge and the inter-cycle purge. Additionally or alternatively, and in some embodiments, he upper chamber part and the lower chamber part are in the open position during at least one of the intra-cycle purge and the inter-cycle purge.

FIG. 5 illustrates a further embodiment of a method for depositing a material on a substrate as described herein. The method employs a system as described herein, and comprises a step of positioning a substrate on a substrate support (511). The method further comprises contacting the substrate with one or more precursors (512). Simultaneously, one or more reaction conditions of the inner chamber are controlled by means of a method as described herein. Thus, a material can be deposited on the substrate. When a desired amount of material has been deposited on the substrate, e.g., in the form of a layer having a pre-determined thickness, precursor flow can be stopped, i.e., the substrate is no longer contacted with precursor, and the method ends (513).

In some embodiments, the step of contacting the substrate with one or more precursors (512) comprises generating a plasma in the inner chamber. In some embodiments, the step of contacting the substrate with one or more precursors (512) comprises providing a reactive species to the inner chamber. In some embodiments, the step of contacting the substrate with one or more precursors (512) comprises providing ultraviolet light to the inner chamber. In some embodiments, the step of contacting the substrate with one or more precursors (512) comprises generating radicals, e.g., by means of a hot wire source or by means of a remote plasma source.

FIG. 6 illustrates an embodiment of a method for etching a material. The method employs a system as described herein, and comprises a step of positioning a substrate on a substrate support (611). Then, the method comprises cyclically executing one or more cycles (615), e.g., a plurality of cycles, e.g., 2, 5, 10, 20, 50, 100, 200, 500, 1000, 2000, 5000, or more cycles. A cycle comprises the following steps, in the following order: a step of contacting the substrate with a first reactant (612), and a step of contacting the substrate with a second reactant (613). Thus, the material, e.g., a layer, is etched away from the substrate, and the method ends (614). Optionally, the step of contacting the substrate with the first reactant and the step of contacting the substrate with the second reactant can be separated by an intra-cycle purge (616). Additionally or alternatively, subsequent cycles can, in some embodiments, be separated by an inter-cycle purge (617). In some embodiments, the first reactant comprises a compound which reacts with the material to yield a non-volatile compound, and the second reactant comprises a compound which reacts with the non-volatile compound to yield a volatile compound as in, for example, in an atomic layer etching process. Atomic layer etching processes as such are known in the Art. The present methods can offer, inter alia, improved process control over known atomic layer etching methods.

In some embodiments, at least one of the step of contacting the substrate with a first reactant (612) and the step of contacting the substrate with a second reactant (613) comprises generating a plasma in the inner chamber. In some embodiments, at least one of the step of contacting the substrate with a first reactant (612) and the step of contacting the substrate with a second reactant (613) comprises providing a reactive species to the inner chamber. The reactive species can comprise radicals. Radicals can be generated, for example, by means of a remote active species source such as a hot wire unit. In some embodiments, at least one of the step of contacting the substrate with a first reactant (612) and the step of contacting the substrate with a second reactant (613) comprises providing ultraviolet light to the inner chamber.

In some embodiments, the upper chamber part and the lower chamber part are in the closed position during at least one of contacting the substrate with the first reactant and contacting the substrate with the second reactant. Additionally or alternatively, in some embodiments, the upper chamber part and the lower chamber part can be in the open position during at least one of contacting the substrate with the first reactant and contacting the substrate with the second reactant.

In some embodiments, the upper chamber part and the lower chamber part are in the closed position during at least one of the intra-cycle purge and the inter-cycle purge. Additionally or alternatively, and in some embodiments, the upper chamber part and the lower chamber part are in the open position during at least one of the intra-cycle purge and the inter-cycle purge.

FIG. 7 illustrates a further embodiment of a method for etching a material on a substrate as described herein. The method employs a system as described herein, and comprises a step of positioning a substrate on a substrate support (711). The method further comprises contacting the substrate with one or more reactants (712). Simultaneously, one or more reaction conditions of the inner chamber are controlled by means of a method as described herein. Thus, a material can be etched from the substrate. When a desired amount of material has been etched, reactant flow can be stopped, i.e., the substrate is no longer contacted with reactant, and the method ends (713).

In some embodiments, the step of contacting the substrate with one or more reactants (712) comprises generating a plasma in the inner chamber. In some embodiments, the step of contacting the substrate with one or more reactants (712) comprises providing a reactive species to the inner chamber. In some embodiments, the step of contacting the substrate with one or more reactants (712) comprises providing ultraviolet light to the inner chamber. In some embodiments, the step of contacting the substrate with one or more reactants (712) comprises providing radicals to the inner chamber, e.g., radicals generated by means of a radical source such as a hot wire unit or a remote plasma unit.

FIG. 8 illustrates an embodiment of a system (100) as described herein. The system (100) is similar to that of FIG. 1, except that it comprises a bypass duct (860) that provides a permanent fluid connection between the outer chamber (200) and the inner chamber (300). The system (100) further comprises an exhaust (870) for removing various gaseous species such as inert gasses, reaction products, and unused reactants from the outer chamber (200). The bypass duct (860) ensures that the outer chamber (200) and the inner chamber (300) are at substantially identical pressures, irrespective of whether the upper chamber part and the lower chamber part are in the closed or in the open position. In the embodiment of FIG. 8, process parameters such as gas flow distribution over a substrate comprised in the inner chamber and substrate temperature can be controlled by changing the size of the opening between the upper chamber part and the lower chamber part while the bypass duct (860) causes the pressure in the inner and outer chamber to be similar regardless of opening size.

The example embodiments of the disclosure described herein do not limit the scope of the invention, since these embodiments are merely examples of the embodiments of the invention, which is defined by the appended claims and their legal equivalents. Any equivalent embodiments are intended to be within the scope of this invention. Indeed, various modifications of the disclosure, in addition to those shown and described herein, such as alternative useful combinations of the elements described, may become apparent to those skilled in the art from the description. Such modifications and embodiments are also intended to fall within the scope of the appended claims.

In the present disclosure, where conditions and/or structures are not specified, the skilled artisan in the art can readily provide such conditions and/or structures in view of the present disclosure, as a matter of routine experimentation. 

1. A system comprising an outer chamber and an inner chamber; wherein the inner chamber is positioned within an outer space comprised in the outer chamber; the inner chamber comprises an inner space comprising a substrate support; the inner chamber comprises an upper chamber part and a lower chamber part; the upper chamber part and the lower chamber part are moveable with respect to each other between a closed position and an open position; the upper chamber part and the lower chamber part abut in the closed position; the upper chamber part and the lower chamber part define an opening in the open position.
 2. The system according to claim 1 wherein the inner space and the outer space are fluidly disconnected in the closed position, and wherein the inner space and the outer space are in fluid connection in the open position.
 3. The system according to claim 1 wherein the inner space and the outer space are in fluid connection by means of a bypass duct.
 4. The system according to claim 1 wherein the opening has a pre-determined opening size, wherein the system further comprises an opening control mechanism, wherein the opening control mechanism is configured for controlling the opening size.
 5. The system according to claim 4 wherein the opening control mechanism comprises a linear actuator.
 6. The system according to claim 4 wherein the opening control mechanism comprises a rotary actuator.
 7. The system according to claim 1 wherein the system further comprises an active species source operationally connected with the inner chamber.
 8. The system according to claim 7 wherein the active species source is in fluid connection with the inner chamber by means of an active species connector comprised in the upper chamber part.
 9. The system according to claim 6 wherein the active species source comprises a remote plasma source.
 10. The system according to claim 6 wherein the active species source comprises a radical source.
 11. The system according to claim 10 wherein the radical source is separated from the inner space by one or more diffusers.
 12. The system according to claim 11 wherein the one or more diffusers are selected from perforated plates and wire mesh plates.
 13. The system according to claim 12 wherein the radical source is separated from the inner space by two or more separators selected from perforated plates and wire mesh plates.
 14. The system according to claim 1 wherein the system further comprises a showerhead injector.
 15. The system according to claim 14 further comprising an RF generator and a ground, wherein the system is configured for generating a plasma between the showerhead injector and the substrate support.
 16. The system according to claim 14 wherein the showerhead injector is a dual channel showerhead injector comprising a first set of channels and a second set of channels.
 17. A method for controlling one or more reaction conditions in an inner chamber, the inner chamber being positioned within an outer space comprised in an outer chamber, the inner chamber comprising an inner space comprising a substrate support supporting a substrate, the inner chamber further comprising an upper chamber part and a lower chamber part, the upper chamber part and the lower chamber part defining an opening having an opening size, the opening fluidly connecting the inner space and the outer space, the method comprising: maintaining the outer chamber at an outer chamber pressure, and maintaining the inner chamber at an inner chamber pressure; moving the upper chamber part with respect to the lower chamber part, or moving the lower chamber part with respect to the upper chamber part, by means of an opening control mechanism, thereby controlling the opening size and at least one process parameter selected from inner chamber temperature, inner chamber pressure, inner chamber pumping speed, inner chamber gas flow rate, inner chamber process uniformity, and inner chamber residence time.
 18. A method for depositing a material on a substrate comprising providing a system according to claim 1; positioning a substrate on the substrate support; cyclically executing one or more cycles, a cycle comprising the following steps, in the following order: a step of contacting the substrate with a first precursor; a step of contacting the substrate with a second precursor; thereby depositing a material on the substrate.
 19. The method according to claim 18 wherein during at least one of contacting the substrate with the first precursor and contacting the substrate with the second precursor, the upper chamber part and the lower chamber part are in the closed position; and, wherein during at least one of contacting the substrate with the first precursor and contacting the substrate with the second precursor, the upper chamber part and the lower chamber part are in the open position.
 20. The method according to claim 18 wherein during at least one of the intra-cycle purge and the inter-cycle purge, the upper chamber part and the lower chamber part are in the closed position. 